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New silicon technologies enable high-performance arrays of single photon avalanche diodes

机译:新的硅技术可实现单光子雪崩二极管的高性能阵列

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摘要

In order to fulfill the requirements of many applications, we recently developed a new technology aimed at combining the advantages of traditional thin and thick silicon Single Photon Avalanche Diodes (SPAD). In particular we demonstrated single-pixel detectors with a remarkable improvement in the Photon Detection Efficiency at the longer wavelengths (e.g. 40% at 800nm) while maintaining a timing jitter better than 100ps. In this paper we will analyze the factors the currently prevent the fabrication of arrays of SPADs by adopting such a Red-Enhanced (RE) technology and we will propose further modifications to the device structure that will enable the fabrication of high performance RE-SPAD arrays for photon timing applications.
机译:为了满足许多应用的需求,我们最近开发了一种新技术,旨在结合传统的薄硅和厚硅单光子雪崩二极管(SPAD)的优势。特别是,我们展示了单像素检测器,该检测器在较长波长(例如800nm处为40%)下的光子检测效率有了显着提高,同时保持了优于100ps的定时抖动。在本文中,我们将通过采用这种红色增强(RE)技术来分析当前阻碍SPAD阵列制造的因素,并且我们将对器件结构提出进一步的修改,以实现高性能RE-SPAD阵列的制造用于光子定时应用。

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